REFERENCES

Scientific articles (newest first) created with PillarHall® microscopic lateral high-aspect-ratio (LHAR) test structures:

1. Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile, J. Yim, E. Verkama, J. Velasco, K. Arts and R.L. Puurunen, Phys. Chem. Chem. Phys. (2022), https://doi.org/10.1039/D1CP04758B
2. Optical metrology of 3D thin film conformality by LHAR chip assisted method M. Utriainen, K. Saastamoinen, H. Rekola, O.M.E. Ylivaara, R.L. Puurunen and P.Hyttinen, Proceedings Volume 12008, Photonic Instrumentation Engineering IX; 120080D (2022), Event: SPIE OPTO, 2022, San Francisco, California, United States, https://doi.org/10.1117/12.2609643
3. Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2, K. Arts, H. Thepass, M.A. Verheijen, R.L. Puurunen, W.M.M. Kessels and H.C.M. Knoops, Chem. Mater. (2021), https://doi.org/10.1021/acs.chemmater.1c00781
4. Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure, E. Haimi, O.M.E. Ylivaara, J. Yim and R.L. Puurunen,
Appl. Surf. Sci. Advances 5 (2021), 100102, https://doi.org/10.1016/j.apsadv.2021.100102
5. Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2, K. Arts, S. Deijkers, R.L. Puurunen, W.M.M. Kessels and H.C.M. Knoops,
J. Phys. Chem. C 2021, 125, 15, 8244–8252, https://doi.org/10.1021/acs.jpcc.1c01505
6. Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels, J. Yim, O.M.E. Ylivaara, M. Ylilammi, V. Korpelainen, E. Haimi, E. Verkama, M. Utriainen and R. L. Puurunen, Phys. Chem. Chem. Phys. 22 (2020), 23107, https://doi.org/10.1039/D0CP03358H
7. Two-Step Approach for Conformal Chemical Vapor-Phase Deposition of Ultra-Thin Conductive Silver Films, S. Wack, P.L. Popa, N. Adjeroud, C. Vergne and R. Leturcq, ACS Appl. Mater. Interfaces 12 (2020), 32, 36329–36338, https://doi.org/10.1021/acsami.0c08606
8. Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: impact on the growth per cycle and wet etch rate, K. Arts, J.H. Deijkers, T. Faraz, R.L. Puurunen, W.M.M. (Erwin) Kessels and H.C.M. Knoops, Appl. Phys. Lett. 117 (2020), 031602,  https://doi.org/10.1063/5.0015379
9. Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
K. Arts, M. Utriainen, R. L. Puurunen, W. M. M. Kessels, H. C. M. Knoops, J. Phys. Chem. C 123 (2019), 44, 27030-27035, https://pubs.acs.org/doi/10.1021/acs.jpcc.9b08176
10. ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition, A. M. Kia, N. Haufe, S. Esmaeili, C. Mart, M. Utriainen, R. L. Puurunen, W. Weinreich, Nanomaterials 9 (2019) art. 1035; https://doi.org/10.3390/nano9071035
11. Surface-Inhibiting Effect in Chemical Vapor Deposition of Boron–Carbon Thin Films from Trimethylboron, L. Souqui, H. Högberg and H. Pedersen, Chem. Mater. 31 (2019) 5408-5412; https://doi.org/10.1021/acs.chemmater.9b00492
12. Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3 extracted from their impact on film conformality, K. Arts, V. Vandalon, R.L. Puurunen, M. Utriainen, F. Gao, W.M.M. Kessels, H.C. Knoops, J. Vac. Sci. Technol. A 37 (2019) art. 030908;
https://doi.org/10.1116/1.5093620
13. Conformality in atomic layer deposition: current status overview of analysis and modelling,
V. Cremers, R.L. Puurunen, J. Dendooven, Appl. Phys. Rev. 6 (2019) art. 021302;
https://doi.org/10.1063/1.5060967
14. Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures, M. Ylilammi, O. M. E. Ylivaara, R. L. Puurunen, J. Appl. Phys. 123 (2018) art. 205301 (8 pages). https://doi.org/10.1063/1.5028178
15. Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures, R. L. Puurunen, F. Gao, Proceedings of the International Baltic Conference on Atomic Layer Deposition, 2-4 Oct 2016, St. Petersburg, Russia. Electronically published in IEEE Xplore, http://ieeexplore.ieee.org/document/7886526/
16.  Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition, M. Mattinen, J. Hämäläinen, F. Gao, P. Jalkanen, K. Mizohata, J. Räisänen, R. L. Puurunen, M. Ritala, M. Leskelä, Langmuir 32 (2016) 10559-10569. http://dx.doi.org/10.1021/acs.langmuir.6b03007
17. Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis, F. Gao, S. Arpiainen, R. L. Puurunen, J. Vac. Sci. Technol. A 33 (2015) 010601. http://dx.doi.org/10.1116/1.4903941, open access [PDF].

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Dr. Mikko Utriainen
Chipmetrics Ltd
Tel. +358 40 753 7415
mikko.utriainen(at)chipmetrics.fi

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