REFERENCES

Scientific articles (newest first) created with PillarHall® microscopic lateral high-aspect-ratio (LHAR) test structures:

Competitive co-diffusion as a route to enhanced step coverage in chemical vapor deposition. Choolakkal, A.H., Niiranen, P., Dorri, S. et al. Nat Commun 15, 10667 (2024). https://doi.org/10.1038/s41467-024-55007-1
Simulated conformality of atomic layer deposition in lateral channels: the impact of the Knudsen number on the saturation profile characteristics: Christine Gonsalves, Jorge A. Velasco, Jihong Yim, Jänis Järvilehto, Ville Vuorinen and Riikka L. Puurunen; Phys. Chem. Chem. Phys., 2024, Advance Article https://doi.org/10.1039/D4CP00131A
Conformal Zn-Benzene Dithiol Thin Films for Temperature-Sensitive Electronics Grown via Industry-Feasible Atomic/Molecular Layer Deposition Technique: A. Philip, T. Jussila, J. Obenlüneschloß, D. Zanders, F. Preischel, J. Kinnunen, A. Devi, M. Karppinen; Small 2024, 20, 2402608 https://doi.org/10.1002/smll.202402608
Lanthanum doped hafnium oxide thin films deposited on a lateral high aspect ratio structure using atomic layer deposition: A comparative study of surface composition and uniformity using x-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry: Jennifer Emara, Alireza M. Kia, Sascha Bönhardt, Clemens Mart, Kati Kühnel, Nora Haufe, Riikka L. Puurunen, Mikko Utriainen, Wenke Weinreich; Applied Surface Science https://doi.org/10.1016/j.apsusc.2024.161408
Conformal High-Aspect-Ratio Solid Electrolyte Thin Films for Li-Ion Batteries by Atomic Layer Deposition: Milad Madadi, Mari Heikkinen, Anish Philip, and Maarit Karppinen; ACS Applied Electronic Materials Article ASAP https://doi.org/10.1021/acsaelm.3c01565
Highly Conformal Solid Electrolyte for Li-Ion Batteries By Atomic Layer Deposition: Milad Madadi, Mari Heikkinen, Anish Philip and Maarit Karppinen; ECS Meeting Abstracts, Volume MA2023-02 3396, (2023) https://doi.org/110.1149/MA2023-0283396mtgabs
Excellent conformality of atmospheric-pressure plasma-enhanced spatial atomic layer deposition with subsecond plasma exposure times: Mike L. van de Poll ; Hardik Jain ; James N. Hilfiker ; Mikko Utriainen ; Paul Poodt ; Wilhelmus M. M. Kessels ; Bart Macco: Appl. Phys. Lett. 123, 182902 (2023) https://doi.org/10.1063/5.0168768
Simulation of conformality of ALD growth inside lateral channels: comparison between a diffusion–reaction model and a ballistic transport–reaction model, Jänis Järvilehto, Jorge A. Velasco, Jihong Yim, Christine Gonsalves and Riikka L. Puurunen, Phys. Chem. Chem. Phys., 2023, 25, 22952, https://doi.org/10.1039/D3CP01829F
3D Thin Film Metrology without Cross-Sectional Sampling (2023), Anish Philip, Mikko Utriainen, Thomas Werner, Pasi Hyttinen, Jaakko Saarilahti, Jussi Kinnunen, Feng Gao, IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM), https://doi.org/10.1109/IITC/MAM57687.2023.10154886
Characterization of PillarHall test chip structures using a reflectometry technique, Aleksandr Danilenko et al 2023 Meas. Sci. Technol. 34 094006, http://urn.fi/URN:ISBN:978-952-64-1265-8
Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals, Jenna Multia, Aalto University publication series Doctoral Theses 69/2023, http://urn.fi/URN:ISBN:978-952-64-1265-8
Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage, H. Jain, M. Creatore and P. Poodt, J. Vac. Sci. Technol.A 41 (2023), 012401, https://doi.org/10.1116/6.0002249
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile, J. Yim, E. Verkama, J. Velasco, K. Arts and R.L. Puurunen, Phys. Chem. Chem. Phys. (2022), https://doi.org/10.1039/D1CP04758B
Optical metrology of 3D thin film conformality by LHAR chip assisted method M. Utriainen, K. Saastamoinen, H. Rekola, O.M.E. Ylivaara, R.L. Puurunen and P.Hyttinen, Proceedings Volume 12008, Photonic Instrumentation Engineering IX; 120080D (2022), Event: SPIE OPTO, 2022, San Francisco, California, United States, https://doi.org/10.1117/12.2609643
Conformality and the role of ions during plasma-assisted atomic layer deposition, K. Arts (2021), PhD thesis 1 (Research TU/e/ Graduation TU/e), Applied Physics and Science Education, Eindhoven University of Technology, 20210915_CO_Arts_hf.pdf (tue.nl)
Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2, K. Arts, H. Thepass, M.A. Verheijen, R.L. Puurunen, W.M.M. Kessels and H.C.M. Knoops, Chem. Mater. (2021), https://doi.org/10.1021/acs.chemmater.1c00781
Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure, E. Haimi, O.M.E. Ylivaara, J. Yim and R.L. Puurunen,
Appl. Surf. Sci. Advances 5 (2021), 100102, https://doi.org/10.1016/j.apsadv.2021.100102
Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2, K. Arts, S. Deijkers, R.L. Puurunen, W.M.M. Kessels and H.C.M. Knoops,
J. Phys. Chem. C 2021, 125, 15, 8244–8252, https://doi.org/10.1021/acs.jpcc.1c01505
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels, J. Yim, O.M.E. Ylivaara, M. Ylilammi, V. Korpelainen, E. Haimi, E. Verkama, M. Utriainen and R. L. Puurunen, Phys. Chem. Chem. Phys. 22 (2020), 23107, https://doi.org/10.1039/D0CP03358H
Two-Step Approach for Conformal Chemical Vapor-Phase Deposition of Ultra-Thin Conductive Silver Films, S. Wack, P.L. Popa, N. Adjeroud, C. Vergne and R. Leturcq, ACS Appl. Mater. Interfaces 12 (2020), 32, 36329–36338, https://doi.org/10.1021/acsami.0c08606
Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: impact on the growth per cycle and wet etch rate, K. Arts, J.H. Deijkers, T. Faraz, R.L. Puurunen, W.M.M. (Erwin) Kessels and H.C.M. Knoops, Appl. Phys. Lett. 117 (2020), 031602,  https://doi.org/10.1063/5.0015379
Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
K. Arts, M. Utriainen, R. L. Puurunen, W. M. M. Kessels, H. C. M. Knoops, J. Phys. Chem. C 123 (2019), 44, 27030-27035, https://pubs.acs.org/doi/10.1021/acs.jpcc.9b08176
ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition, A. M. Kia, N. Haufe, S. Esmaeili, C. Mart, M. Utriainen, R. L. Puurunen, W. Weinreich, Nanomaterials 9 (2019) art. 1035; https://doi.org/10.3390/nano9071035
Surface-Inhibiting Effect in Chemical Vapor Deposition of Boron–Carbon Thin Films from Trimethylboron, L. Souqui, H. Högberg and H. Pedersen, Chem. Mater. 31 (2019) 5408-5412; https://doi.org/10.1021/acs.chemmater.9b00492
Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3 extracted from their impact on film conformality, K. Arts, V. Vandalon, R.L. Puurunen, M. Utriainen, F. Gao, W.M.M. Kessels, H.C. Knoops, J. Vac. Sci. Technol. A 37 (2019) art. 030908;
https://doi.org/10.1116/1.5093620
Conformality in atomic layer deposition: current status overview of analysis and modelling,
V. Cremers, R.L. Puurunen, J. Dendooven, Appl. Phys. Rev. 6 (2019) art. 021302;
https://doi.org/10.1063/1.5060967
Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures, M. Ylilammi, O. M. E. Ylivaara, R. L. Puurunen, J. Appl. Phys. 123 (2018) art. 205301 (8 pages). https://doi.org/10.1063/1.5028178
Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures, R. L. Puurunen, F. Gao, Proceedings of the International Baltic Conference on Atomic Layer Deposition, 2-4 Oct 2016, St. Petersburg, Russia. Electronically published in IEEE Xplore, http://ieeexplore.ieee.org/document/7886526/
Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition, M. Mattinen, J. Hämäläinen, F. Gao, P. Jalkanen, K. Mizohata, J. Räisänen, R. L. Puurunen, M. Ritala, M. Leskelä, Langmuir 32 (2016) 10559, http://dx.doi.org/10.1021/acs.langmuir.6b03007
Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis, F. Gao, S. Arpiainen, R. L. Puurunen, J. Vac. Sci. Technol. A 33 (2015) 010601, http://dx.doi.org/10.1116/1.4903941

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