Scientific articles (newest first) created with PillarHall® microscopic lateral high-aspect-ratio (LHAR) test structures:

Conformal High-Aspect-Ratio Solid Electrolyte Thin Films for Li-Ion Batteries by Atomic Layer Deposition: Milad Madadi, Mari Heikkinen, Anish Philip, and Maarit Karppinen; ACS Applied Electronic Materials Article ASAP
Highly Conformal Solid Electrolyte for Li-Ion Batteries By Atomic Layer Deposition: Milad Madadi, Mari Heikkinen, Anish Philip and Maarit Karppinen; ECS Meeting Abstracts, Volume MA2023-02 3396, (2023)
Excellent conformality of atmospheric-pressure plasma-enhanced spatial atomic layer deposition with subsecond plasma exposure times: Mike L. van de Poll ; Hardik Jain ; James N. Hilfiker ; Mikko Utriainen ; Paul Poodt ; Wilhelmus M. M. Kessels ; Bart Macco: Appl. Phys. Lett. 123, 182902 (2023)
Simulation of conformality of ALD growth inside lateral channels: comparison between a diffusion–reaction model and a ballistic transport–reaction model, Jänis Järvilehto, Jorge A. Velasco, Jihong Yim, Christine Gonsalves and Riikka L. Puurunen, Phys. Chem. Chem. Phys., 2023, 25, 22952,
3D Thin Film Metrology without Cross-Sectional Sampling (2023), Anish Philip, Mikko Utriainen, Thomas Werner, Pasi Hyttinen, Jaakko Saarilahti, Jussi Kinnunen, Feng Gao, IEEE International Interconnect Technology Conference (IITC) and IEEE Materials for Advanced Metallization Conference (MAM)(IITC/MAM),
Characterization of PillarHall test chip structures using a reflectometry technique, Aleksandr Danilenko et al 2023 Meas. Sci. Technol. 34 094006,
Atomic/molecular layer deposited crystalline metal-organic thin films based on low-valent metals, Jenna Multia, Aalto University publication series Doctoral Theses 69/2023,
Molecular layer deposition of alucone in high aspect ratio trenches: The effect of TMA outgassing on step-coverage, H. Jain, M. Creatore and P. Poodt, J. Vac. Sci. Technol.A 41 (2023), 012401,
Conformality of atomic layer deposition in microchannels: impact of process parameters on the simulated thickness profile, J. Yim, E. Verkama, J. Velasco, K. Arts and R.L. Puurunen, Phys. Chem. Chem. Phys. (2022),
Optical metrology of 3D thin film conformality by LHAR chip assisted method M. Utriainen, K. Saastamoinen, H. Rekola, O.M.E. Ylivaara, R.L. Puurunen and P.Hyttinen, Proceedings Volume 12008, Photonic Instrumentation Engineering IX; 120080D (2022), Event: SPIE OPTO, 2022, San Francisco, California, United States,
Conformality and the role of ions during plasma-assisted atomic layer deposition, K. Arts (2021), PhD thesis 1 (Research TU/e/ Graduation TU/e), Applied Physics and Science Education, Eindhoven University of Technology, 20210915_CO_Arts_hf.pdf (
Impact of Ions on Film Conformality and Crystallinity during Plasma-Assisted Atomic Layer Deposition of TiO2, K. Arts, H. Thepass, M.A. Verheijen, R.L. Puurunen, W.M.M. Kessels and H.C.M. Knoops, Chem. Mater. (2021),
Saturation profile measurement of atomic layer deposited film by X-ray microanalysis on lateral high-aspect-ratio structure, E. Haimi, O.M.E. Ylivaara, J. Yim and R.L. Puurunen,
Appl. Surf. Sci. Advances 5 (2021), 100102,
Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO2 and TiO2, K. Arts, S. Deijkers, R.L. Puurunen, W.M.M. Kessels and H.C.M. Knoops,
J. Phys. Chem. C 2021, 125, 15, 8244–8252,
Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels, J. Yim, O.M.E. Ylivaara, M. Ylilammi, V. Korpelainen, E. Haimi, E. Verkama, M. Utriainen and R. L. Puurunen, Phys. Chem. Chem. Phys. 22 (2020), 23107,
Two-Step Approach for Conformal Chemical Vapor-Phase Deposition of Ultra-Thin Conductive Silver Films, S. Wack, P.L. Popa, N. Adjeroud, C. Vergne and R. Leturcq, ACS Appl. Mater. Interfaces 12 (2020), 32, 36329–36338,
Evidence for low-energy ions influencing plasma-assisted atomic layer deposition of SiO2: impact on the growth per cycle and wet etch rate, K. Arts, J.H. Deijkers, T. Faraz, R.L. Puurunen, W.M.M. (Erwin) Kessels and H.C.M. Knoops, Appl. Phys. Lett. 117 (2020), 031602,
Film Conformality and Extracted Recombination Probabilities of O Atoms during Plasma-Assisted Atomic Layer Deposition of SiO2, TiO2, Al2O3, and HfO2
K. Arts, M. Utriainen, R. L. Puurunen, W. M. M. Kessels, H. C. M. Knoops, J. Phys. Chem. C 123 (2019), 44, 27030-27035,
ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition, A. M. Kia, N. Haufe, S. Esmaeili, C. Mart, M. Utriainen, R. L. Puurunen, W. Weinreich, Nanomaterials 9 (2019) art. 1035;
Surface-Inhibiting Effect in Chemical Vapor Deposition of Boron–Carbon Thin Films from Trimethylboron, L. Souqui, H. Högberg and H. Pedersen, Chem. Mater. 31 (2019) 5408-5412;
Sticking probabilities of H2O and Al(CH3)3 during atomic layer deposition of Al2O3 extracted from their impact on film conformality, K. Arts, V. Vandalon, R.L. Puurunen, M. Utriainen, F. Gao, W.M.M. Kessels, H.C. Knoops, J. Vac. Sci. Technol. A 37 (2019) art. 030908;
Conformality in atomic layer deposition: current status overview of analysis and modelling,
V. Cremers, R.L. Puurunen, J. Dendooven, Appl. Phys. Rev. 6 (2019) art. 021302;
Modeling growth kinetics of thin films made by atomic layer deposition in lateral high-aspect-ratio structures, M. Ylilammi, O. M. E. Ylivaara, R. L. Puurunen, J. Appl. Phys. 123 (2018) art. 205301 (8 pages).
Influence of ALD temperature on thin film conformality: Investigation with microscopic lateral high-aspect-ratio structures, R. L. Puurunen, F. Gao, Proceedings of the International Baltic Conference on Atomic Layer Deposition, 2-4 Oct 2016, St. Petersburg, Russia. Electronically published in IEEE Xplore,
Nucleation and Conformality of Iridium and Iridium Oxide Thin Films Grown by Atomic Layer Deposition, M. Mattinen, J. Hämäläinen, F. Gao, P. Jalkanen, K. Mizohata, J. Räisänen, R. L. Puurunen, M. Ritala, M. Leskelä, Langmuir 32 (2016) 10559,
Microscopic silicon-based lateral high-aspect-ratio structures for thin film conformality analysis, F. Gao, S. Arpiainen, R. L. Puurunen, J. Vac. Sci. Technol. A 33 (2015) 010601,

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